R&D Intership in Power Semiconductor Devices 80 - 100% (f/m/d)

Location:

Lenzburg, Aargau, Switzerland

Job ID:

R0057102

Date Posted:

2025-02-10

Company Name:

HITACHI ENERGY LTD

Profession (Job Category):

Administration & Facilities

Job Schedule: 

Full time

Remote:

No

Job Description:

The opportunity

In our Semiconductors business unit in Lenzburg, we develop and produce high-performance state of the art semiconductors power devices for applications in different fields like rail transportation, power transmission, renewable energy, eMobility and more.

In this assignment, your primary goal includes design and investigation of next generation Si power semiconductor device concepts via TCAD simulations for improved electrical performance and enhanced safe-operating area (SOA) robustness pushing device capability towards high-voltage and high temperature operations.

How you’ll make an impact

• Literature review for recent trends in power devices, proposal of innovative device concept, device design, calibrated process and device simulations

• Benchmarking with existing baseline technology, presenting and  reporting the results to the team members

• Perform design and simulation activities via Synopsys TCAD Sentaurus simulation toolsuite

• Conduct root cause study, establish good understanding and electrical models of device failure modes during SOA conditions in TCAD tools with inputs from experimental trials

• Propose novel ideas to enhance the capability without sacrificing the other performance parameters like on-state and switching losses

• Experimental realization (such as DOE, concept mask-layout) and analysis of electrical characterization data in collaboration with other teams like fabrication and testing team members is part of the assignment

Your background

•  Currently pursuing a Master’s or PhD degree in electrical engineering, physics, material science or similar discipline ideally specializing in semiconductor technology

• Knowledge of basic device physics (p-n junctions, energy band diagrams, depletion region, charge carrier dynamics), semiconductor material (Si, SiC, GaN etc), fabrication processes and understanding of working principle of basic semiconductor devices such as p-n diodes, MOSFETs, BJTs. Prior-experience on power semiconductor devices such as Si-IGBTs, power MOSFETs would be a plus

• Prior hands-on experience or familarity with device/process simulations TCAD tools such as Synopsys is a strong plus

• Exposure to basic electrical characterizations tools and techniques such as I-V, C-V would be a plus

• Well-versed in programming/scripting languages such as python

• Know-how in data analysis tools and statistics is advantageous

• Excellent communication skills, both written and verbal, to effectively document the design and present results to the team 

• Fluent in English, German is a plus 

More about us

You interact and collaborate with a dynamic and multidisciplinary team that will supervise and guide the project. If you have a strong technical background, motivation to develop innovative solutions, and you are goal-oriented, this is your opportunity to contribute in building a stronger and more sustainable energy future.  

Availability 5 – 10 months, location mainly in office in Lenzburg (The primary intended duration of the internship is six months.) 

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